Electron-hole pair evaluation in silicon dioxide SiO2 derived from rice husk ash as an insulating layer in MOSFET dosimeter using PHITS: An expanded analysis

Abstract

We assess the feasibility of using silicon dioxide (SiO₂) from rice husk ash (RHA) as an insulating layer in MOSFET dosimeters by calculating electron-hole pair formation induced by ionizing radiation with beam energies ranging from 2.5 to 6.0 MeV using PHITS. We used a 6 MV Varian Clinac 600C 10×10 cm² source from IAEA to simulate energy deposition. The stoichiometric composition and density of derived SiO₂ are based on a prior study by Fusinato et al. [Environ. Sci. Pollut. Res. 30, 21494 (2023)]. A 6MV linac reference model from Li et al. [PLoS ONE 17, e0261042 (2022)]. was used to calibrate the simulation setup. The result reveal an 8.37% difference between pure and derived SiO₂ due to their different densities, but a linear correlation between energy deposition and electron-hole pair formation was observed, which confirms that RHA-derived SiO₂ is a radiation-sensitive insulating layer material for MOSFET dosimeters.