Structural and ultrafast characteristics of LTG-InGaAs photoconductive antennas in-situ annealed at 600°C

Authors

  • Gerald Angelo Catindig National Institute of Physics, University of the Philippines Diliman, Philippines
  • Hannah Bardolaza National Institute of Physics, University of the Philippines Diliman, Philippines
  • Kristiene Joy Fernandez National Institute of Physics, University of the Philippines Diliman, Philippines
  • Dean Von Johari Narag Materials Science and Engineering Program, University of the Philippines Diliman, Philippines
  • Jonel Francisco Materials Science and Engineering Program, University of the Philippines Diliman, Philippines
  • Craig Egan Allistair Tan National Institute of Physics, University of the Philippines Diliman, Philippines
  • Roni Andig National Institute of Physics, University of the Philippines Diliman, Philippines
  • Gian Carlo Carrillo Materials Science and Engineering Program, University of the Philippines Diliman, Philippines
  • Mae Agatha Tumanguil Materials Science and Engineering Program, University of the Philippines Diliman, Philippines
  • Earl Conan Casalme Materials Science and Engineering Program, University of the Philippines Diliman, Philippines
  • Lourdes Nicole Dela Rosa National Institute of Physics, University of the Philippines Diliman, Philippines
  • Ivan Cedrick Verona National Institute of Physics, University of the Philippines Diliman, Philippines
  • Eros Henry Jay Acosta National Institute of Physics, University of the Philippines Diliman, Philippines
  • Jose Marie Sebastian Arcilla National Institute of Physics, University of the Philippines Diliman, Philippines
  • John Paul Ferrolino Materials Science and Engineering Program, University of the Philippines Diliman, Philippines
  • Hideaki Kitahara Research Center for the Development of the Far Infrared Region, University of Fukui, Japan
  • Masahiko Tani Research Center for the Development of the Far Infrared Region, University of Fukui, Japan
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman, Philippines
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman, Philippines
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman, Philippines

Abstract

We demonstrate the growth, device fabrication, and characterization on indium gallium arsenide InxGa1−xAs thin films grown at 175°C (350°C) and in-situ annealed at 600°C. X-ray diffraction measurements reveal that the indium mole fraction (band gap) of the grown InxGa1−xAs films are 0.465 (0.788 eV) and 0.364 (0.905 eV) for the 175°C and 350°C grown thin films, respectively. The terahertz (THz) emission from the fabricated PCAs reveals that the film grown at 175°C is consistently stronger than the THz emission of the film grown at 350°C for excitation powers ranging between 9 and 90 mW. We compare the characterization results of the thin films and relate the results to material properties like carrier mobility and band gap.

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Published

2025-06-16

Issue

2025: Proceedings of the 43rd Samahang Pisika ng Pilipinas Physics Conference

Section

Poster Session PA (Photonics, Condensed Matter, Materials and Quantum Science)

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Structural and ultrafast characteristics of LTG-InGaAs photoconductive antennas in-situ annealed at 600°C”, Proc. SPP, vol. 43, no. 1, p. SPP-2025-PA-11, Jun. 2025, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2025-PA-11