Structural and ultrafast characteristics of LTG-InGaAs photoconductive antennas in-situ annealed at 600°C
Abstract
We demonstrate the growth, device fabrication, and characterization on indium gallium arsenide InxGa1−xAs thin films grown at 175°C (350°C) and in-situ annealed at 600°C. X-ray diffraction measurements reveal that the indium mole fraction (band gap) of the grown InxGa1−xAs films are 0.465 (0.788 eV) and 0.364 (0.905 eV) for the 175°C and 350°C grown thin films, respectively. The terahertz (THz) emission from the fabricated PCAs reveals that the film grown at 175°C is consistently stronger than the THz emission of the film grown at 350°C for excitation powers ranging between 9 and 90 mW. We compare the characterization results of the thin films and relate the results to material properties like carrier mobility and band gap.
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25-28 June 2025, National Institute of Physics, University of the Philippines Diliman
Please visit the SPP2025 activity webpage for more information on this year's Physics Congress.