Si-intercalated graphene/SiC(0001) as studied by low energy electron diffraction and X-ray photoelectron spectroscopy

Authors

  • Joaquin Angelo M. Aguirre ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
  • Dominique Vignaud ⋅ FR Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Lille, CNRS, Centrale Lille, Junia, Université Polytechnique Hauts de France, UMR 8520-IEMN F59000 Lille, France
  • Xavier Wallart ⋅ FR Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Lille, CNRS, Centrale Lille, Junia, Université Polytechnique Hauts de France, UMR 8520-IEMN F59000 Lille, France
  • Ivy Razado-Colambo ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

The buffer layer of a 1 ML graphene/SiC(0001) sample grown by standard graphitization was decoupled by intercalating Si atoms between the SiC substrate and the (6√3×6√3)R30° buffer layer. Comparison of the LEED patterns and C1s XPS spectra of the as grown 1 ML graphene/SiC(0001) and the Si-intercalated sample showed a successful intercalation and decoupling of the buffer layer. This result was further confirmed by using the XPS attenuation equation to determine the number of graphene layers. It was found that the number of layers of the as grown 1 ML graphene before Si intercalation was increased to 2 ML after Si intercalation. This evidences the decoupling of the buffer layer from the SiC(0001) substrate resulting to an additional graphene layer.

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Issue

Article ID

SPP-2024-PA-11

Section

Poster Session A (Condensed Matter Physics and Materials Science)

Published

2024-06-27

How to Cite

[1]
JAM Aguirre, D Vignaud, X Wallart, and I Razado-Colambo, Si-intercalated graphene/SiC(0001) as studied by low energy electron diffraction and X-ray photoelectron spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 42, SPP-2024-PA-11 (2024). URL: https://proceedings.spp-online.org/article/view/SPP-2024-PA-11.