Epitaxial growth, characterizations, and integration of 2D Bi2O2X semiconductors

Authors

  • Ying-Hao Chu Department of Materials Science and Engineering, National Tsing Hua University, Taiwan

Abstract

The search for 2D semiconductors with excellent electronic performance and stability in the ambient environment is urgent. Bi2O2X (X = S, Se, Te), a series of air-stable layered oxides, have emerged as promising new semiconductors with excellent electronic and optoelectronic properties. Studies demonstrate that its layered nature makes it ideal for fabricating electronic devices down to a few atomic layers. Currently, these materials are synthesized by either chemical solution or vapor methods. It remains a great chance to have control of thickness and uniformity. In this study, the physical vapor deposition method is adopted for depositing these materials on various oxide substrates. A pathway to integrate with Si will also be demonstrated. For practical applications, electronic devices such as thin film transistors and optoelectronic devices such as solar cells and photodetectors will be delivered with optimized performances.

Author Biography

  • Ying-Hao Chu, Department of Materials Science and Engineering, National Tsing Hua University, Taiwan

    Ying-Hao Chu received his Ph.D. from the Department of Materials Science and Engineering at National Tsing Hua University in 2004. Then, he joined the University of California, Berkeley as a postdoc. In 2008, he acquired an assistant professorship in the Department of Materials Science and Engineering at National Chiao Tung University. He was promoted to associate professor in 2015 and then to professor in 2018. In 2019, he was appointed as a distinguished professor. In 2019, he had an appointment with ACS Applied Electronic Materials to be an associate editor. In 2022, he returned to National Tsing Hua University with a promotion in the summer to be a distinguished professor. In the meantime, he was named the director of the Center for Nanotechnology, Materials Science, and Microsystems, at National Tsing Hua University. In May 2024, he starts his appointment as the Associate Vice President of R\&D at National Tsing Hua University. His research is highly focused on functional oxides and strongly correlated electron systems. He has extensive experience in the use of advanced characterization techniques to understand and manipulate functional oxide heterostructures, nanostructures, and interfaces. His current goal is to create a pathway to use high-quality oxide heteroepitaxy for soft transparent technology. Now, he is a pioneer with the most publications in this research direction. He has published more than 370 papers, with ~35000 citations in academic journals and has an h-index of 89.

SPP2024 Proceedings Cover

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Published

2024-07-03

Issue

2024: Proceedings of the 42nd Samahang Pisika ng Pilipinas Physics Conference

Section

Invited Presentations

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How to Cite

[1]
“Epitaxial growth, characterizations, and integration of 2D Bi2O2X semiconductors”, Proc. SPP, vol. 42, no. 1, p. SPP-2024-INV-2D-01, Jul. 2024, Accessed: Mar. 26, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2024-INV-2D-01