Epitaxial growth, characterizations, and integration of 2D Bi2O2X semiconductors
Abstract
The search for 2D semiconductors with excellent electronic performance and stability in the ambient environment is urgent. Bi2O2X (X = S, Se, Te), a series of air-stable layered oxides, have emerged as promising new semiconductors with excellent electronic and optoelectronic properties. Studies demonstrate that its layered nature makes it ideal for fabricating electronic devices down to a few atomic layers. Currently, these materials are synthesized by either chemical solution or vapor methods. It remains a great chance to have control of thickness and uniformity. In this study, the physical vapor deposition method is adopted for depositing these materials on various oxide substrates. A pathway to integrate with Si will also be demonstrated. For practical applications, electronic devices such as thin film transistors and optoelectronic devices such as solar cells and photodetectors will be delivered with optimized performances.