Terahertz emission from AlN/SI-GaAs heterostructure investigated using transmission-geometry terahertz time-domain spectroscopy

Authors

  • Kristiene Joy Fernandez Materials Science and Engineering Program, University of the Philippines Diliman
  • Rhenish C. Simon Physics Department, De La Salle University, Manila
  • Hannah R. Bardolaza National Institute of Physics, University of the Philippines Diliman
  • Joy Kristelle C. De Mata Materials Science and Engineering Program, University of the Philippines Diliman
  • John Daniel E. Vasquez Materials Science and Engineering Program and National Institute of Physics, University of the Philippines Diliman
  • Roni Andig National Institute of Physics, University of the Philippines Diliman
  • Jose Mari Sebastian C. Arcilla National Institute of Physics, University of the Philippines Diliman
  • Ivan Cedrick M. Verona National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
  • Cyril S. Salang Materials Science and Engineering Program, University of the Philippines Diliman

Abstract

We report a 900% terahertz (THz) emission enhancement and a 46.67% bandwidth gain from the bare SI-GaAs substrate to the AlN/SI-GaAs heterostructure fabricated via Radio Frequency (RF) Magnetron Sputtering. Parametric pump power measurements also showed a significant increase in the substrate’s optical-to-THz conversion efficiency due to the deposited AlN film. These results demonstrate the better performance of AlN/SI-GaAs as a prospective THz emitter than the bare substrate. The study focused on the effect of AlN thickness, sample reflectivity, and pump power on the THz radiation amplitude using Scanning Electron Microscopy (SEM), reflectivity measurements, and transmission-geometry THz- Time Domain Spectroscopy (TDS), respectively. The THz emission enhancement was then attributed to the band bending and optical cavity effect.

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Published

2024-06-26

Issue

2024: Proceedings of the 42nd Samahang Pisika ng Pilipinas Physics Conference

Section

Condensed Matter Physics and Materials Science

License

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Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Terahertz emission from AlN/SI-GaAs heterostructure investigated using transmission-geometry terahertz time-domain spectroscopy”, Proc. SPP, vol. 42, no. 1, pp. SPP–2024, Jun. 2024, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2024-1B-05