Terahertz emission from AlN/SI-GaAs heterostructure investigated using transmission-geometry terahertz time-domain spectroscopy

Authors

Kristiene Joy Fernandez Materials Science and Engineering Program, University of the Philippines Diliman
Rhenish C. Simon Physics Department, De La Salle University, Manila
Hannah R. Bardolaza National Institute of Physics, University of the Philippines Diliman
Joy Kristelle C. De Mata Materials Science and Engineering Program, University of the Philippines Diliman
John Daniel E. Vasquez Materials Science and Engineering Program and National Institute of Physics, University of the Philippines Diliman
Roni Andig National Institute of Physics, University of the Philippines Diliman
Jose Mari Sebastian C. Arcilla National Institute of Physics, University of the Philippines Diliman
Ivan Cedrick M. Verona National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
Cyril S. Salang Materials Science and Engineering Program, University of the Philippines Diliman

Abstract

We report a 900% terahertz (THz) emission enhancement and a 46.67% bandwidth gain from the bare SI-GaAs substrate to the AlN/SI-GaAs heterostructure fabricated via Radio Frequency (RF) Magnetron Sputtering. Parametric pump power measurements also showed a significant increase in the substrate’s optical-to-THz conversion efficiency due to the deposited AlN film. These results demonstrate the better performance of AlN/SI-GaAs as a prospective THz emitter than the bare substrate. The study focused on the effect of AlN thickness, sample reflectivity, and pump power on the THz radiation amplitude using Scanning Electron Microscopy (SEM), reflectivity measurements, and transmission-geometry THz- Time Domain Spectroscopy (TDS), respectively. The THz emission enhancement was then attributed to the band bending and optical cavity effect.

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Issue

2024: Proceedings of the 42nd Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2024-1B-05

Section

Condensed Matter Physics and Materials Science

Published

2024-06-26

How to Cite

[1]

KJ Fernandez, RC Simon, HR Bardolaza, JKC De Mata, JDE Vasquez, R Andig, JMSC Arcilla, ICM Verona, AS Somintac, AA Salvador, ES Estacio, and CS Salang, Terahertz emission from AlN/SI-GaAs heterostructure investigated using transmission-geometry terahertz time-domain spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 42, SPP-2024-1B-05 (2024). URL: https://proceedings.spp-online.org/article/view/SPP-2024-1B-05.