Effect of sputtering gas ratio and post-annealing parameters on AlN thin films deposited via low power RF magnetron sputtering

Authors

Roni Andig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
John Paul Ferrolino ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Earl Conan Casalme ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Joy Kristelle De Mata ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

This work explores the deposition of aluminum nitride (AlN) using a low-power RF magnetron sputtering system. The X-ray diffraction analysis (XRD) pattern of the fabricated sample shows peaks representing AlN (001) and (002) crystal orientation at 33.25° and 36.09°. There was a noticeable peak shift when the samples were annealed to 1000°C owing to a more crystalline sample. However, the deposited thin films still have low crystallinity and the parameters used can still be further optimized.

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Issue

2023: Proceedings of the 41st Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2023-PA-34

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2023-07-14

How to Cite

[1]

R Andig, MA Tumanguil, JP Ferrolino, EC Casalme, JK De Mata, and A Salvador, Effect of sputtering gas ratio and post-annealing parameters on AlN thin films deposited via low power RF magnetron sputtering, Proceedings of the Samahang Pisika ng Pilipinas 41, SPP-2023-PA-34 (2023). URL: https://proceedings.spp-online.org/article/view/SPP-2023-PA-34.