Effect of sputtering gas ratio and post-annealing parameters on AlN thin films deposited via low power RF magnetron sputtering

Authors

Roni Andig National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil Materials Science and Engineering Program, University of the Philippines Diliman
John Paul Ferrolino Materials Science and Engineering Program, University of the Philippines Diliman
Earl Conan Casalme Materials Science and Engineering Program, University of the Philippines Diliman
Joy Kristelle De Mata Materials Science and Engineering Program, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

This work explores the deposition of aluminum nitride (AlN) using a low-power RF magnetron sputtering system. The X-ray diffraction analysis (XRD) pattern of the fabricated sample shows peaks representing AlN (001) and (002) crystal orientation at 33.25° and 36.09°. There was a noticeable peak shift when the samples were annealed to 1000°C owing to a more crystalline sample. However, the deposited thin films still have low crystallinity and the parameters used can still be further optimized.

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Issue

2023: Proceedings of the 41st Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2023-PA-34

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2023-07-14

How to Cite

[1]

R Andig, MA Tumanguil, JP Ferrolino, EC Casalme, JK De Mata, and A Salvador, Effect of sputtering gas ratio and post-annealing parameters on AlN thin films deposited via low power RF magnetron sputtering, Proceedings of the Samahang Pisika ng Pilipinas 41, SPP-2023-PA-34 (2023). URL: https://proceedings.spp-online.org/article/view/SPP-2023-PA-34.