Effect of sputtering gas ratio and post-annealing parameters on AlN thin films deposited via low power RF magnetron sputtering
This work explores the deposition of aluminum nitride (AlN) using a low-power RF magnetron sputtering system. The X-ray diffraction analysis (XRD) pattern of the fabricated sample shows peaks representing AlN (001) and (002) crystal orientation at 33.25° and 36.09°. There was a noticeable peak shift when the samples were annealed to 1000°C owing to a more crystalline sample. However, the deposited thin films still have low crystallinity and the parameters used can still be further optimized.