Effects of annealing temperature on the electrical properties of PEDOT:PSS films deposited on glass substrate

Abstract

The PEDOT:PSS films were successfully synthesized on a glass substrate via drop casting method. The deposited PEDOT:PSS film were undergo heat treatment with different annealing temperature (100­­⁰C, 150°C, 200°C, and 250°C). The film growth was confirmed by using Raman spectroscopy. All PEDOT:PSS films showed Raman peaks at 990 cm⁻¹ and 1122 cm⁻¹ which are attributed to PSS vibrational mode. Additionally, two principal peaks located at 1434.45 cm⁻¹ and 1498.36 cm⁻¹ are ascribed to the Raman band of PEDOT. Results from the current-voltage curve show a decreasing resistance as the annealing temperature increases. The PEDOT:PSS film annealed at 200°C obtained the lowest resistance of 5892.52 Ω. This is 2.1 times lower compared to that of the as-grown film.