Material parameter calculation of semiconductor substrates via terahertz time-domain spectroscopy

Authors

  • Zsara Mari Bianca V. Campano ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Ivan Cedrick M. Verona ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Lourdes Nicole F. Dela Rosa ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Vince Paul P. Juguilon ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jairrus Publico ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
  • John Paul R. Ferollino ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
  • Neil Irvin F. Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Alexander E. De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Hannah R. Bardolaza ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this study, terahertz time-domain spectroscopy (THz-TDS) was utilized to determine the refractive indices, n, and absorption coefficients, α, of semi-insulating gallium arsenide (SI-GaAs) and lightly doped n-type silicon (n-Si). Amplitude and phase information from the spectra of the transmitted THz signal were used to calculate for the material optical parameters. The obtained experimental value of refractive indices of SI-GaAs and n-Si at 1.25 THz were calculated to be 3.57 and 3.35, respectively. Meanwhile, the respective absorption coefficients of SI-GaAs and n-Si at 1.25 THz were also calculated to be 3.55 cm−1 and 7.79 cm−1. The experimental values of the samples' refractive indices and absorption coefficients are in close agreement with published reference values.

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Published

2023-07-11

Issue

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

How to Cite

[1]
“Material parameter calculation of semiconductor substrates via terahertz time-domain spectroscopy”, Proc. SPP, vol. 41, no. 1, p. SPP-2023-PA-24, Jul. 2023, Accessed: Apr. 02, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2023-PA-24