Effect of simulated slit geometry on simulated interference pattern intensity as measured by light-dependent resistor

Authors

Franchesca Mia R. Tortoza Department of Physical Sciences, Polytechnic University of the Philippines
Niña Zambale Simon National Institute of Physics, University of the Philippines Diliman
Nathaniel P. Hermosa II National Institute of Physics, University of the Philippines Diliman
Rhenish C. Simon Physics Department, De La Salle University, Manila

Abstract

This paper demonstrates the possibility of determining single-slit and double-slit geometric properties through calculating the effective intensity illuminated by the interference patterns on the light sensitive part of the light-dependent resistor. Different interference patterns are simulated through varying the geometry of the slits. This effective intensity is plotted against the relative position of the resistor to the centre of the slits. The shape and features of the intensity-position graph as measured by the light-dependent resistor can be used to differentiate between single-slit and double-slit set-ups with varying dimensions.

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Issue

2023: Proceedings of the 41st Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2023-PA-23

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2023-07-11

How to Cite

[1]

FMR Tortoza, NZ Simon, NP Hermosa, and RC Simon, Effect of simulated slit geometry on simulated interference pattern intensity as measured by light-dependent resistor, Proceedings of the Samahang Pisika ng Pilipinas 41, SPP-2023-PA-23 (2023). URL: https://proceedings.spp-online.org/article/view/SPP-2023-PA-23.