Effect of simulated slit geometry on simulated interference pattern intensity as measured by light-dependent resistor
This paper demonstrates the possibility of determining single-slit and double-slit geometric properties through calculating the effective intensity illuminated by the interference patterns on the light sensitive part of the light-dependent resistor. Different interference patterns are simulated through varying the geometry of the slits. This effective intensity is plotted against the relative position of the resistor to the centre of the slits. The shape and features of the intensity-position graph as measured by the light-dependent resistor can be used to differentiate between single-slit and double-slit set-ups with varying dimensions.