Effect of As flux on the optical properties of InAs quantum dashes grown by molecular beam epitaxy for 2 μm lasers

Authors

  • Rafael Jumar Chu Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology and Division of Nanoscience and Technology, University of Science and Technology, South Korea
  • Daehwan Jung Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology and Division of Nanoscience and Technology, University of Science and Technology, South Korea

Abstract

InAs quantum dashes are quasi-zero-dimensional nanostructures with a wide and tunable emission wavelength range. They can be used as laser gain materials for the proposed 2 μm communication window, but the growth conditions still require optimization. Here we explore the effect of V/III flux ratio during the ripening stage of quantum dashes on their structure and optical properties. We observed a 270% increase in integrated photoluminescence intensity when the V/III flux ratio is decreased to 10. This large improvement in emission is a huge step towards obtaining high-performance InAs quantum dash lasers for next-generation 2 μm telecommunication systems.

SPP2023 Proceedings Cover

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Published

2023-06-28

Issue

2023: Proceedings of the 41st Samahang Pisika ng Pilipinas Physics Conference

Section

Optics and Photonics

License

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How to Cite

[1]
“Effect of As flux on the optical properties of InAs quantum dashes grown by molecular beam epitaxy for 2 μm lasers”, Proc. SPP, vol. 41, no. 1, pp. SPP–2023, Jun. 2023, Accessed: Mar. 25, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2023-3B-04