Effect of As flux on the optical properties of InAs quantum dashes grown by molecular beam epitaxy for 2 μm lasers

Authors

Rafael Jumar Chu Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology and Division of Nanoscience and Technology, University of Science and Technology, South Korea
Daehwan Jung Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology and Division of Nanoscience and Technology, University of Science and Technology, South Korea

Abstract

InAs quantum dashes are quasi-zero-dimensional nanostructures with a wide and tunable emission wavelength range. They can be used as laser gain materials for the proposed 2 μm communication window, but the growth conditions still require optimization. Here we explore the effect of V/III flux ratio during the ripening stage of quantum dashes on their structure and optical properties. We observed a 270% increase in integrated photoluminescence intensity when the V/III flux ratio is decreased to 10. This large improvement in emission is a huge step towards obtaining high-performance InAs quantum dash lasers for next-generation 2 μm telecommunication systems.

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Issue

2023: Proceedings of the 41st Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2023-3B-04

Section

Optics and Photonics

Published

2023-06-28

How to Cite

[1]

RJ Chu and D Jung, Effect of As flux on the optical properties of InAs quantum dashes grown by molecular beam epitaxy for 2 μm lasers, Proceedings of the Samahang Pisika ng Pilipinas 41, SPP-2023-3B-04 (2023). URL: https://proceedings.spp-online.org/article/view/SPP-2023-3B-04.