Effect of As flux on the optical properties of InAs quantum dashes grown by molecular beam epitaxy for 2 μm lasers
InAs quantum dashes are quasi-zero-dimensional nanostructures with a wide and tunable emission wavelength range. They can be used as laser gain materials for the proposed 2 μm communication window, but the growth conditions still require optimization. Here we explore the effect of V/III flux ratio during the ripening stage of quantum dashes on their structure and optical properties. We observed a 270% increase in integrated photoluminescence intensity when the V/III flux ratio is decreased to 10. This large improvement in emission is a huge step towards obtaining high-performance InAs quantum dash lasers for next-generation 2 μm telecommunication systems.