Comparison of the terahertz emission from zinc oxide and low-temperature-grown gallium arsenide photoconductive antennas via the Drude-Lorentz model
Abstract
We investigated the terahertz (THz) emission characteristics of zinc oxide (ZnO) and compared it with the widely used low-temperature-grown gallium arsenide (LT-GaAs) photoconductive antennas (PCA) by employing the Drude-Lorentz model. The calculated THz peak emission values of ZnO, and LT-GaAs are 106 Vm−1, and 133 Vm−1, respectively. Furthermore, we simulated the laser pump power (Ppump) and bias voltage (Vbias) dependence of the ZnO and LT-GaAs PCA THz peak amplitude. The maximum emission values of ZnO before voltage breakdown (VB), and optical damage threshold (PB) are at 6401 Vm−1, and 1602 Vm−1, respectively. Similarly, for LT-GaAs, the maximum emission are 797 Vm−1, and 531 Vm−1 before VB, and PB occur, respectively. These results provide insights for identifying the optimal parameters for future ZnO-based PCA design and operation.