Femtosecond pulsed laser deposition of highly oriented cerium (IV) oxide thin films with background oxygen gas
Abstract
We report the femtosecond pulsed laser deposition (fs-PLD) of highly oriented cerium (IV) oxide (CeO2) thin films with background oxygen (O2) gas. The CeO2 films are deposited on Si(100) substrates at different O2 gas pressures of 30 to 90 mTorr and then annealed at 1000°C in ambient air. All films exhibit CeO2 reflections along with few cerium (III) oxide (Ce2O3) reflections. These Ce2O3 reflections are attributed to the post-deposition heat treatment due to their presence regardless of the O2 gas pressure. Moreover, although the films have lattice constants similar to that of the CeO2 target, a high O2 gas pressure results in smaller mean crystallite sizes and a different preferential orientation. Our findings suggest that using a lower background O2 gas pressure is sufficient for the fs-PLD of highly oriented CeO2 thin films.
Downloads
Published
Issue
Section
License
By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.








