Enhancement of T_C and J_C by indium doping in Bi₂Sr₂CaCu₂O₈ films

Authors

Francesca Isabel N. de Vera ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines - Diliman

Abstract

We report the improvements in electrical transport properties of Bi₂Sr_2-xIn_xCaCu₂O_8+d (In-doped Bi-2212) films. Low level indium doping in Bi-2212 films results in optimization of charge carrier concentration, decreased structural anisotropy, higher activation energy for flux motion and better intergrain connectivity. Activation energy U_ig and critical current density J_C are proportional to superconducting critical temperature T_C, and inversely proportional to superconducting transition width ΔT_C. This confirms key correlation between superconducting transport properties and flux dynamics with intergrain properties.

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Issue

2022: Proceedings of the 40th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2022-PA-03

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2022-09-24

How to Cite

[1]

FIN de Vera and RV Sarmago, Enhancement of TC and JC by indium doping in Bi2Sr2CaCu2O8 films, Proceedings of the Samahang Pisika ng Pilipinas 40, SPP-2022-PA-03 (2022). URL: https://proceedings.spp-online.org/article/view/SPP-2022-PA-03.