Morphological characterization and space radiation effect simulations of epitaxially grown GaAs/GaSb heterostructures
We evaluate the morphology and simulate the effects of space radiation on epitaxially grown GaAs/ GaSb heterostructures. Scanning electron microscopy was used to study the semiconductor's surface microstructures. Monte Carlo-based SRIM/TRIM software was used to evaluate ion implantations, ionizations, and displacement vacancies produced by proton (H+ ion) irradiation at different impact angles. Results of SEM surface morphology showed formation of pits of threading dislocations. Meanwhile, space radiation’s simulated effects found favorable results for thinner films, which on average suffered less ion implantations, ionizations, and vacancies near heterojunctions. Thin-film GaAs/GaSb solar cell materials potentially have higher intrinsic resilience to space radiation damage.