Investigation of hydrogen adsorption on gallium nitride: A density functional theory study

Authors

  • Efraem C. Larenio Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
  • William Kevin L. Abran Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
  • Jessiel S. Gueriba Institute of Laser Engineering, Osaka University
  • Darwin B. Putungan Institute of Mathematical Sciences and Physics, University of the Philippines Los Banos
  • Melvin John F. Empizo Institute of Laser Engineering, Osaka University
  • Nobuhiko Sarukura Institute of Laser Engineering, Osaka University
  • Alexandra B. Santos-Putungan Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

Density functional theory (DFT) calculations were performed to investigate the effects of hydrogen (H) adsorption on polar GaN (0001) surfaces terminated with gallium (Ga) and nitrogen (N) atoms. We studied the effects of different coverage of H atoms on both terminations and found that the N-terminated surface adsorbs with much larger energies compared to the Ga-terminated surface. For a 0.25 monolayer (ML) coverage, the N-terminated surface has the largest adsorption energy of −2.63 eV, and the H atom transfers around 0.40e charge to the N atom based on Bader charge analysis. It was also observed that changes in the average adsorption energy is more dramatic, implying that the N-terminated surface is more sensitive to H adsorption.

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Published

2022-09-26

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Section

Condensed Matter Physics and Materials Science

How to Cite

[1]
“Investigation of hydrogen adsorption on gallium nitride: A density functional theory study”, Proc. SPP, vol. 40, no. 1, pp. SPP–2022, Sep. 2022, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2022-3E-03