Investigating the terahertz emission properties of low-temperature-grown gallium arsenide (LTG-GaAs) photoconductive antenna (PCA) devices via Drude-Lorentz model
Abstract
We study the terahertz (THz) emission properties of low-temperature-grown gallium arsenide (LTG-GaAs) photoconductive antenna devices. Using a simple Drude-Lorentz model of photocarrier transport, we simulated the effect of excitation power and bias voltage on the THz emission. For comparison, we have fabricated an LTG-GaAs PCA and measured its THz emission using a standard THz time-domain spectroscopy (THz-TDS) setup. We discuss the similarity and differences between the simulated and experimental THz emission data. These results provide important insights on the parametric investigation and optimization of PCA devices.