An investigation of the terahertz emission properties of low-temperature-grown gallium arsenide photoconductive antenna devices using an equivalent circuit
Abstract
An equivalent circuit was used to study the generation of terahertz (THz) radiation from low-temperature-grown gallium arsenide (LTG-GaAs) photoconductive antenna (PCA) device which takes into account the generation, transport, and screening effects on the photogenerated carriers. A parametric investigation on the effects of laser excitation power, pulse duration, carrier lifetime, and mobility on the radiated THz emission was performed. These results provide insights on the design optimization of intense THz sources.
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Accelerating national progress via physics: From quantum to stellar and beyond
20-22 October 2021
Please visit the SPP2021 activity webpage for more information on this year's Physics Congress.