Effect of electron irradiation on the THz emission of low temperature-grown GaAs/Si epilayers

Authors

  • Roni Andig National Institute of Physics, University of the Philippines Diliman
  • Craig Egan Allistair D. Tan National Institute of Physics, University of the Philippines Diliman
  • Gerald Angelo R. Catindig National Institute of Physics, University of the Philippines Diliman
  • Erick John Carlo D. Solibet National Institute of Physics, University of the Philippines Diliman
  • Alexander E. De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Horace Andrew F. Husay National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann P. Prieto Materials Science and Engineering Program, College of Science, University of the Philippines Diliman
  • Melvin John F. Empizo Institute of Laser Engineering, Osaka University, Japan
  • Karl Cedric P. Gonzales National Institute of Physics, University of the Philippines Diliman
  • Ivan Cedrick M. Verona National Institute of Physics, University of the Philippines Diliman
  • Hannah R. Bardolaza National Institute of Physics, University of the Philippines Diliman
  • Vallerie Ann I. Samson Philippine Nuclear Research Institute
  • Giuseppe Filam O. Dean Philippine Nuclear Research Institute
  • Nobuhiko Sarukura Institute of Laser Engineering, Osaka University, Japan
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We examine the effect of electron irradiation on the terahertz (THz) emission of low temperature-grown gallium arsenide on silicon (LT-GaAs/Si) epilayers. The GaAs layers were prepared on Si (100) and (111) substrates at 400°C via molecular beam epitaxy (MBE) and were irradiated with 2.5 MeV electrons to an absorbed dose of 200 kGy. By comparing the non-irradiated and 200-kGy-irradiated epilayers, we found that electron irradiation affects the crystallinity of the MBE-grown epilayers. On the other hand, THz time domain spectroscopy (THz-TDS) measurements reveal that there is no significant difference in the THz emission characteristics between the non-irradiated and electron-irradiated LT-GaAs/Si epilayers. These results suggest that MBE-grown LT-GaAs/Si epilayers are robust to electron irradiation and can be developed further for radiation-durable applications.

Downloads

Issue

Article ID

SPP-2021-2F-04

Section

Condensed Matter Physics and Materials Science

Published

2021-10-07

How to Cite

[1]
R Andig, CEAD Tan, GAR Catindig, EJCD Solibet, AE De Los Reyes, HAF Husay, EAP Prieto, MJF Empizo, KCP Gonzales, ICM Verona, HR Bardolaza, VAI Samson, GFO Dean, N Sarukura, AS Somintac, ES Estacio, and AA Salvador, Effect of electron irradiation on the THz emission of low temperature-grown GaAs/Si epilayers, Proceedings of the Samahang Pisika ng Pilipinas 39, SPP-2021-2F-04 (2021). URL: https://proceedings.spp-online.org/article/view/SPP-2021-2F-04.