Terahertz emission of LT-GaAs and SI-GaAs photoconductive antenna devices at 1.55µm below-bandgap femtosecond laser excitation

Authors

Jairrus B. Publico ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Ivan Cedrick M. Verona ⋅ PH National Institute of Physics, University of the Philippines Diliman
Hannah R. Bardolaza ⋅ PH National Institute of Physics, University of the Philippines Diliman
Neil Irvin F. Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alexander E. De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this work, we study the terahertz (THz) emission characteristics of LT-GaAs and SI-GaAs photoconductive antenna (PCA) devices at 1.55 µm below-bandgap excitation wavelength. Results have shown that the THz amplitude of SI-GaAs PCA follows a linear dependence with excitation power. On the other hand, the LT-GaAs PCA showed a quadratic dependence with excitation power owing to the abundance of defects acting as midgap states in a two-step photoabsorption process. A comparison was made in the THz emission of LT-GaAs at above-bandgap 780 nm excitation to differentiate between two-photon and single-photon absorption processes.

Downloads

Issue

2021: Proceedings of the 39th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2021-1B-02

Section

Condensed Matter Physics and Materials Science

Published

2021-10-19

How to Cite

[1]

JB Publico, ICM Verona, HR Bardolaza, NIF Cabello, AE De Los Reyes, and ES Estacio, Terahertz emission of LT-GaAs and SI-GaAs photoconductive antenna devices at 1.55µm below-bandgap femtosecond laser excitation, Proceedings of the Samahang Pisika ng Pilipinas 39, SPP-2021-1B-02 (2021). URL: https://proceedings.spp-online.org/article/view/SPP-2021-1B-02.