Terahertz emission of LT-GaAs and SI-GaAs photoconductive antenna devices at 1.55µm below-bandgap femtosecond laser excitation

Authors

Jairrus B. Publico Materials Science and Engineering Program, University of the Philippines Diliman
Ivan Cedrick M. Verona National Institute of Physics, University of the Philippines Diliman
Hannah R. Bardolaza National Institute of Physics, University of the Philippines Diliman
Neil Irvin F. Cabello National Institute of Physics, University of the Philippines Diliman
Alexander E. De Los Reyes National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

In this work, we study the terahertz (THz) emission characteristics of LT-GaAs and SI-GaAs photoconductive antenna (PCA) devices at 1.55 µm below-bandgap excitation wavelength. Results have shown that the THz amplitude of SI-GaAs PCA follows a linear dependence with excitation power. On the other hand, the LT-GaAs PCA showed a quadratic dependence with excitation power owing to the abundance of defects acting as midgap states in a two-step photoabsorption process. A comparison was made in the THz emission of LT-GaAs at above-bandgap 780 nm excitation to differentiate between two-photon and single-photon absorption processes.

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Issue

2021: Proceedings of the 39th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2021-1B-02

Section

Condensed Matter Physics and Materials Science

Published

2021-10-19

How to Cite

[1]

JB Publico, ICM Verona, HR Bardolaza, NIF Cabello, AE De Los Reyes, and ES Estacio, Terahertz emission of LT-GaAs and SI-GaAs photoconductive antenna devices at 1.55µm below-bandgap femtosecond laser excitation, Proceedings of the Samahang Pisika ng Pilipinas 39, SPP-2021-1B-02 (2021). URL: https://proceedings.spp-online.org/article/view/SPP-2021-1B-02.