Nonequilibrium many-body quantum transport in resonant tunneling diode (RTD) with n-n+n- spacer layer
Simulations on conventional RTDs are ubiquitous in physics and materials science because of their apparent "simplicity." In this work, we present numerical calculations based on Lattice Weyl-Wigner (LWW) Formalism to study an RTD with an unconventional structure. Conventional RTDs have a single n-(lightly-doped layer) spacer layer while in this study we use n-(lightly-doped layer)n+(heavily-doped layer)n-(lightly doped layer) spacer layer. Experimentally, this type of structure shows two current voltage curves that extend until zero bias. Using LWW formalism, we found two charge states at zero bias. Our current-voltage characteristic calculations show that RTDs with n-n+n- spacer layer exhibit different characteristics to that of conventional RTDs.