Monte Carlo simulation of cobalt-60 ion irradiation into silicon carbide–metal-oxide field effect transistor (SiC-MOSFET)

Abstract

Semiconductors are widely used for switching and amplifying electronic signals in electronic devices. But, as the transistors scale down in size, the need for performance integration has accelerated the scaling trend in devices parameter. This study utilizes SRIM simulations to calculate the electronic and nuclear stopping of a target atom as it interacts with the ion to determine the damaged induced by a utilized cobalt-60 (Co-60) into a silicon carbide–metal-oxide field effect transistor (SiC-MOSFET). Compton Effect in ion collision attained by irradiating 100 keV - 10 MeV energy levels given that a single simulation on each energy level were consists of 3000 ions. The experiment was performed on three types of metal gates: poly-silicon, molybdenum and tantalum. The simulation of poly-silicon was imposed as the basis in the selection of an efficient substitute for the said material. Simulation on the metallic gate exhibits a good results and it shows that between the two metal gates, molybdenum yields a better result. Thus, molybdenum is a much efficient material as a replacement for the poly-silicon gate that is facing a depletion issue on its lattice.