Terahertz emission from MBE-grown InGaAs/InP and InAs/GaSb films excited by 1550 nm femtosecond laser pulses

Authors

Cyril S Salang ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Dean Von Johari Casilana Narag ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Rommel Jagus ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Craig Egan Allistair D. Tan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Gerald Angelo R. Catindig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roni Andig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha C. Tumanguil-Quitoras ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ivan Cedrick M. Verona ⋅ PH National Institute of Physics, University of the Philippines Diliman
Hannah R. Bardolaza ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Armando S Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the performance of molecular beam epitaxy (MBE)-grown Indium Arsenide on Gallium Antimonide (InAs/GaSb) and Indium Gallium Arsenide on Indium Phosphide (InGaAs/InP) as terahertz (THz) radiation emitter when photoexcited by 1550 nm-wavelength femtosecond (fs) laser pulses. The emitted THz radiation of both samples has approximately 2 ps pulse width and 2 THz bandwidth. A 35% higher THz radiation peak-to-peak intensity was obtained from InGaAs/InP compared to InAs/GaSb due to the former's greater resistivity and laser penetration depth. Spectral dips corresponding to water vapor absorption can be observed within the usable frequency bandwidth in the power spectra of the samples. This implies that the samples' THz emission using 1550 nm excitation source can be used for spectroscopic fingerprinting. Our results can be used in the development of cost-effective and compact fs laser-based THz-Time Domain Spectroscopy (THz-TDS) systems.

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Issue

2020: Proceedings of the 38th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2020-2F-04

Section

Condensed Matter Physics and Materials Science

Published

2020-10-19

How to Cite

[1]

CS Salang, DVJC Narag, R Jagus, CEAD Tan, GAR Catindig, R Andig, MAC Tumanguil-Quitoras, A De Los Reyes, ICM Verona, HR Bardolaza, AS Somintac, AA Salvador, and ES Estacio, Terahertz emission from MBE-grown InGaAs/InP and InAs/GaSb films excited by 1550 nm femtosecond laser pulses, Proceedings of the Samahang Pisika ng Pilipinas 38, SPP-2020-2F-04 (2020). URL: https://proceedings.spp-online.org/article/view/SPP-2020-2F-04.