Terahertz emission from heavily-doped p-type silicon hole arrays

Authors

Al-Khadeem Ahmad National Institute of Physics, University of the Philippines Diliman
Joybelle Lopez Materials Science and Engineering Program, University of the Philippines Diliman
Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
Philippe Martin Tingzon Materials Science and Engineering Program, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

We investigated the terahertz (THz) emission properties in heavily-doped p-type silicon (Si) hole arrays. Deep etching of Si decreases the free carrier density thereby enhancing the THz emission due to reduced free carrier absorption. We fabricated the Si hole arrays using a two-step metal-assisted chemical etching technique and employed THz time-domain spectroscopy in reflection and transmission geometries to measure the THz spectra. Results showed enhancement on the THz emission of the heavily-doped Si hole arrays for longer etch times. However, the THz emission significantly dropped after an etch time of 6 hours and 30 minutes.

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Issue

2019: Proceedings of the 37th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2019-PA-38

Section

Poster Session PA

Published

2019-05-23

How to Cite

[1]

A-K Ahmad, J Lopez, A De Los Reyes, PM Tingzon, A Salvador, A Somintac, and E Estacio, Terahertz emission from heavily-doped p-type silicon hole arrays, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-PA-38 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-PA-38.