Spin Hall effect of visible light due to monolayer graphene on SiO2/Si
Abstract
We have investigated the Imbert-Fedorov (IF) shift, commonly known as the Spin Hall effect of light, due to monolayer graphene on SiO2/Si. We have numerically calculated the transverse IF shifts using the transfer matrix method and determined which incident wavelength gives the maximum shift. We have calculated physical shifts of up to 1.6μm when using 45o linearly polarized and 543-nm wavelength incident light. This study presents the potential of the Spin Hall effect of light as a tool for characterization of graphene and other 2D materials.
Downloads
Published
Issue
Section
License
By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.
