Optical characterization of epitaxially lifted-off gallium arsenide thin film on acetate

Authors

  • Anselmo Jose Ledesma National Institute of Physics, University of the Philippines Diliman
  • Anthony Montecillo Materials Science and Engineering Program, University of the Philippines Diliman
  • Gerald Angelo Catindig National Institute of Physics, University of the Philippines Diliman
  • Horace Andrew Husay National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez Materials Science and Engineering Program, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

A gallium arsenide (GaAs) thin film with a thickness of 780nm was epitaxially lifted-off (ELO) and transferred onto an acetate. Characterization using photoluminescence (PL) and Raman spectroscopies were then performed to the sample. The PL data indicates that the ELO GaAs/acetate sample has the same peak as that of the as-grown GaAs thin film. Additionally, there is a degradation of the optical quality of the film as seen by a broadening of its registered PL peak. On the other hand, fluence dependent Raman spectroscopy shows that there occurs a Raman shift at higher laser intensities for the as-grown sample, indicating a strain in the sample. However, further research is needed to confirm the exact cause of this phenomenon. Furthermore, no peak shifts were observed for the ELO GaAs/acetate sample at all laser intensities. We can conclude that the ELO technique is a capable and viable option to fabricate GaAs thin films on plastic.

Downloads

Issue

Article ID

SPP-2019-PA-34

Section

Poster Session PA

Published

2019-05-23

How to Cite

[1]
AJ Ledesma, A Montecillo, GA Catindig, HA Husay, JD Vasquez, A Salvador, E Estacio, and A Somintac, Optical characterization of epitaxially lifted-off gallium arsenide thin film on acetate, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-PA-34 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-PA-34.