Thermal-induced tensile and compressive strain effects on the THz emission from epitaxially lifted-off undoped/n-type GaAs

Authors

Gerald Angelo Catindig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alexander E De los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Hannah Bardolaza ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Kerphy Liandro Patrocenio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rommel Jagus ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the temperature effects on the terahertz (THz) emission of undoped/n-type gallium arsenide (GaAs) thin films bonded onto silicon (Si), magnesium oxide (MgO), and acetate substrates. The THz emission was found to significantly decrease for compressively strained samples as compared to their as-grown counterpart. Supporting data from temperature-dependent photoluminescence spectroscopy showed that the films bonded onto acetate exhibit compressive strain similar to that of films bonded to MgO. This result was attributed to a compressive strain-induced electric field which reduced the total electric field.

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Issue

2019: Proceedings of the 37th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2019-3B-04

Section

Ultrafast Optics, Photonics, and Terahertz Physics

Published

2019-05-22

How to Cite

[1]

GA Catindig, AE De los Reyes, JD Vasquez, H Bardolaza, KL Patrocenio, R Jagus, A Somintac, E Estacio, and A Salvador, Thermal-induced tensile and compressive strain effects on the THz emission from epitaxially lifted-off undoped/n-type GaAs, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-3B-04 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-3B-04.