Terahertz emission enhancement of gallium arsenide coated with silicon nanowires

Authors

Neil Irvin Cabello ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Alexander De Los Reyes ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Joybelle Lopez ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
Vladimir Sarmiento ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
Hannah Bardolaza ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
Gerald Angelo Catindig ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Karl Cedric Gonzales ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Kerphy Liandro Patrocenio ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Rommel Jagus ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
Elizabeth Ann Prieto ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the enhancement in the terahertz (THz) emission of gallium arsenide (GaAs) wafers
coated with silicon nanowires (SiNWs) and elucidate on the possible origin of the enhancement. The SiNWs were fabricated using metal-assisted chemical etching and were applied onto n-GaAs and semi-insulating (SI) GaAs using drop casting method. From standard reflection geometry THz time domain spectroscopy (THz-TDS), the THz emission was observed to have stronger enhancement for SiNW-coated SI GaAs wafers. Under different magnetic field orientations, both bare and SiNW-coated Si GaAs display π-shifted THz-TDS waveforms while bare and SiNW-coated n-GaAs display unshifted THz-TDS waveforms. The THz enhancement in the SiNW-coated wafers was attributed to the increase in photocarrier absorption induced by the SiNWs.

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Issue

2019: Proceedings of the 37th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2019-3B-02

Section

Ultrafast Optics, Photonics, and Terahertz Physics

Published

2019-05-22

How to Cite

[1]

NI Cabello, A De Los Reyes, J Lopez, V Sarmiento, JD Vasquez, H Bardolaza, GA Catindig, KC Gonzales, KL Patrocenio, R Jagus, EA Prieto, A Salvador, A Somintac, and E Estacio, Terahertz emission enhancement of gallium arsenide coated with silicon nanowires, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-3B-02 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-3B-02.