Effect of DC bias during contact electrification of muscovite mica using tapping mode AFM-KPFM

Authors

Jose Manuel Esmeria, Jr Physics Department, De La Salle University Manila
Terencio Lacuesta Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Romeric Pobre Physics Department, De La Salle University Manila

Abstract

A microscopic level study of contact electrification of cleaved muscovite mica disk was performed using a tapping mode scanning system of the atomic force microscope. Using a fixed amplitude set point, and scan speed, image of surface potential during contact electrification was recorded using Kelvin Probe Force Microscope for both negative and positive dc biasing of the n- type Silicon tip. Surface potential sign flip was observed to when the dc biased was increased from 0 to ±3 V. These changes in the surface potential is attributed to energy band-bending and charge back tunneling between mica and n- type Silicon tip during contact electrification

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Published

2019-05-17

How to Cite

[1]

JM Esmeria, T Lacuesta, and R Pobre, Effect of DC bias during contact electrification of muscovite mica using tapping mode AFM-KPFM, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-2E-02 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-2E-02.