Effect of DC bias during contact electrification of muscovite mica using tapping mode AFM-KPFM

Authors

Jose Manuel Esmeria, Jr ⋅ PH Physics Department, De La Salle University Manila
Terencio Lacuesta ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Romeric Pobre ⋅ PH Physics Department, De La Salle University Manila

Abstract

A microscopic level study of contact electrification of cleaved muscovite mica disk was performed using a tapping mode scanning system of the atomic force microscope. Using a fixed amplitude set point, and scan speed, image of surface potential during contact electrification was recorded using Kelvin Probe Force Microscope for both negative and positive dc biasing of the n- type Silicon tip. Surface potential sign flip was observed to when the dc biased was increased from 0 to ±3 V. These changes in the surface potential is attributed to energy band-bending and charge back tunneling between mica and n- type Silicon tip during contact electrification

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Issue

2019: Proceedings of the 37th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2019-2E-02

Section

Condensed Matter Physics and Materials Science

Published

2019-05-17

How to Cite

[1]

JM Esmeria, T Lacuesta, and R Pobre, Effect of DC bias during contact electrification of muscovite mica using tapping mode AFM-KPFM, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-2E-02 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-2E-02.