Effect of graphene on the photoreflectance and photoluminescence of GaAs

Authors

  • Bess Garcia Singidas National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
  • Vallerie Ann Innis Samson National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Roland Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

Photoluminescence and photoreflectance spectra of graphene-coated and bare semi-insulating GaAs were taken at 532nm pump excitation. Graphene enhances the photoluminescence of GaAs by a factor of four without modifying the lineshape. Graphene enhances and reverses the sign of the fundamental edge photoreflectance of GaAs. Below the band gap, a minimum is observable in reflectance of graphene coated GaAs at energies lower that the onset of photoluminescence. Considering the lineshape effects in photoreflectance, enhanced photoluminescence may be caused by exciton coupling between photoexcited carriers in graphene and in GaAs.

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Published

2019-05-24

How to Cite

[1]
BG Singidas, JD Vasquez, VAI Samson, A Salvador, E Estacio, and R Sarmago, Effect of graphene on the photoreflectance and photoluminescence of GaAs, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-1E-01 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-1E-01.

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Section

Condensed Matter and Materials Science