Effect of graphene on the photoreflectance and photoluminescence of GaAs

Authors

Bess Garcia Singidas ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Vallerie Ann Innis Samson ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Photoluminescence and photoreflectance spectra of graphene-coated and bare semi-insulating GaAs were taken at 532nm pump excitation. Graphene enhances the photoluminescence of GaAs by a factor of four without modifying the lineshape. Graphene enhances and reverses the sign of the fundamental edge photoreflectance of GaAs. Below the band gap, a minimum is observable in reflectance of graphene coated GaAs at energies lower that the onset of photoluminescence. Considering the lineshape effects in photoreflectance, enhanced photoluminescence may be caused by exciton coupling between photoexcited carriers in graphene and in GaAs.

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Issue

2019: Proceedings of the 37th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2019-1E-01

Section

Condensed Matter Physics and Materials Science

Published

2019-05-24

How to Cite

[1]

BG Singidas, JD Vasquez, VAI Samson, A Salvador, E Estacio, and R Sarmago, Effect of graphene on the photoreflectance and photoluminescence of GaAs, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-1E-01 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-1E-01.