Drift-diffusion in InAs based on ambipolar transport

Authors

  • Deborah Anne Opaon Lumantas National Institute of Physics, University of the Philippines Diliman
  • Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Joselito O. Muldera Department of Physics, De La Salle University
  • Lorenzo P. Lopez, Jr Material Science and Engineering Program, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

The results of this study show the one-order of magnitude difference in terahertz radiation power of p-InAs and n-InAs via the ambipolar transport equation in the low-excitation regime. The excess electrons and holes diffuse with a single effective diffusion coefficient equal to the diffusion coefficient of the excess minority carrier. Hence, the higher THz power of the p-InAs can be attributed to its higher effective diffusion coefficient. 

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Published

2018-05-31

How to Cite

[1]
DAO Lumantas, A De Los Reyes, JO Muldera, LP Lopez, AS Somintac, AA Salvador, and ES Estacio, Drift-diffusion in InAs based on ambipolar transport, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-PA-48 (2018). URL: https://proceedings.spp-online.org/article/view/SPP-2018-PA-48.

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Section

Poster Session A (Materials Science, Instrumentation, and Photonics)