Drift-diffusion in InAs based on ambipolar transport

Authors

Deborah Anne Opaon Lumantas ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito O. Muldera ⋅ PH Department of Physics, De La Salle University
Lorenzo P. Lopez, Jr ⋅ PH Material Science and Engineering Program, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The results of this study show the one-order of magnitude difference in terahertz radiation power of p-InAs and n-InAs via the ambipolar transport equation in the low-excitation regime. The excess electrons and holes diffuse with a single effective diffusion coefficient equal to the diffusion coefficient of the excess minority carrier. Hence, the higher THz power of the p-InAs can be attributed to its higher effective diffusion coefficient.

Downloads

Published

2018-05-31

Issue

2018: Proceedings of the 36th Samahang Pisika ng Pilipinas Physics Conference

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

License

How to Cite

[1]

Drift-diffusion in InAs based on ambipolar transport, Proceedings of the Samahang Pisika ng Pilipinas 36, (2018). URL: https://proceedings.spp-online.org/article/view/SPP-2018-PA-48.