Terahertz emission of a 550nm-thick epitaxially lifted-off gallium arsenide thin film integrated on a porous silicon distributed Bragg reflector

Authors

  • Ameera Jose Materials Science and Engineering Program, University of the Philippines Diliman
  • Anthony Montecillo Materials Science and Engineering Program, University of the Philippines Diliman
  • Joybelle Lopez Materials Science and Engineering Program, University of the Philippines Diliman
  • Alexander De Los Reyes National Institute of Physics, University of the Philippines Diliman
  • Miguel Bacaoco National Institute of Physics, University of the Philippines Diliman
  • Maria Angela Faustino Materials Science and Engineering Program, University of the Philippines Diliman
  • Arven Cafe National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez Materials Science and Engineering Program, University of the Philippines Diliman
  • Karl Cedric Gonzales National Institute of Physics, University of the Philippines Diliman
  • Gerald Angelo Catindig National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

The THz emission of an undoped/n-type GaAs thin film on a porous silicon distributed Bragg reflector (PSi DBR) is presented. The process was carried out by epitaxial lift-off of an MBE-grown GaAs epilayer, followed by integration on the DBR via Van der Waal's bonding. The active GaAs film has a total thickness less than the penetration depth of the 800 nm excitation source, while the PSi DBR substrate was designed as a reflector for the transmitted optical excitation photons at the film-substrate interface. The design exhibited a 67% increase in the peak-to-peak THz amplitude compared to a similar GaAs film integrated on silicon (Si) substrate. The THz enhancement was attributed to a higher number of photogenerated carriers in the film due to the increased 800nm light absorption and the additional drift-related THz radiation at the GaAs-PSi DBR interface.

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Published

2018-05-29

How to Cite

[1]
A Jose, A Montecillo, J Lopez, A De Los Reyes, M Bacaoco, MA Faustino, A Cafe, JD Vasquez, KC Gonzales, GA Catindig, A Somintac, A Salvador, and E Estacio, Terahertz emission of a 550nm-thick epitaxially lifted-off gallium arsenide thin film integrated on a porous silicon distributed Bragg reflector, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-PA-40 (2018). URL: https://proceedings.spp-online.org/article/view/SPP-2018-PA-40.

Issue

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)