Optical and structural characterization of LTG-GaAs correlating excess As with THz emission

Authors

Miguel Yee Bacaoco ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann P Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karl Cedric P Gonzales ⋅ PH National Institute of Physics, University of the Philippines Diliman
Horace Andrew F Husay ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel E Vasquez ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Alexander E De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Angela B Faustino ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Arnel A Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Optical and structural characteristics of in-house low-temperature-grown gallium arsenide (LTG-GaAs) grown at different substrate temperature (T_S) were investigated to determine their effects in the terahertz (THz) emission of the sample. Arsenic (As)-related defects in LTG-GaAs were shown to reduce the photoluminescence (PL) emission of the samples grown at lower T_S. The concentration of excess As atoms in LTG-GAs was calculated from the Raman spectra and was shown to be 1.64% and 2.50% for samples grown at T_S = 320°C and 270°C, respectively. The sample with higher concentration of excess As exhibited Raman spectra with narrow full width at half maximum attributed to larger As precipitate by finite particle size effect. The THz emission intensity of LTG-GaAs was observed to be significantly higher than the reference GaAs sample which proved that the presence of excess As in LTG-GaAs was effective in the enhancement of THz radiation.

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Issue

2018: Proceedings of the 36th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2018-PA-23

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

Published

2018-05-25

How to Cite

[1]

MY Bacaoco, EAP Prieto, KCP Gonzales, HAF Husay, JDE Vasquez, AE De Los Reyes, MAB Faustino, AA Salvador, AS Somintac, and ES Estacio, Optical and structural characterization of LTG-GaAs correlating excess As with THz emission, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-PA-23 (2018). URL: https://proceedings.spp-online.org/article/view/SPP-2018-PA-23.