Terahertz emission in GaAs grown on Si(100) at different substrate temperatures

Authors

Karl Cedric Paguntalan Gonzales ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Puran Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Gerald Angelo R Catindig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Cepeda Tumanguil-Quitoras ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alexander E De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Angela B Faustino ⋅ PH National Institute of Physics, University of the Philippines Diliman
Horace Andrew F Husay ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Soriano Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Angud Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Surat Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Terahertz (THz) emission in gallium arsenide grown on silicon (GaAs on Si) at different substrate temperatures, T_s = 320^oC, 520^oC and 630^oC, is presented in this study. An LTG-GaAs buffer layer system was implemented to compensate for the ~4.1% lattice mismatch in the heteroepitaxy of GaAs on Si(100) by molecular beam epitaxy. X-ray results confirmed the high crystalline quality of the GaAs epitaxial layers on Si. The GaAs crystal quality improved with increasing Si substrate temperature. The THz emission of GaAs on Si grown at T_s = 520^oC, measured by THz time-domain spectroscopy in reflection geometry, exhibited the highest THz intensity despite not having the highest crystalline quality. The THz emission efficiency was dependent on the Si substrate temperature. Additionally, for LTG-GaAs on Si grown at T_s = 320^oC, the THz emission was comparable to LTG-GaAs grown on semi-insulating GaAs (SI-GaAs). For GaAs on Si grown at T_s = 630^oC, the THz emission was significantly higher than GaAs on SI-GaAs. The heteroepitaxy of GaAs on Si proved effective in enhancing the THz emission.

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Issue

2018: Proceedings of the 36th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2018-2B-05

Section

Condensed Matter Physics and Materials Science

Published

2018-05-27

How to Cite

[1]

KCP Gonzales, EAP Prieto, GAR Catindig, MAC Tumanguil-Quitoras, AE De Los Reyes, MAB Faustino, HAF Husay, AS Somintac, AA Salvador, and ES Estacio, Terahertz emission in GaAs grown on Si(100) at different substrate temperatures, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-2B-05 (2018). URL: https://proceedings.spp-online.org/article/view/SPP-2018-2B-05.