Broad double resistive transitions of Bi2Sr2-xInxCaCu2O8+x bulk samples

Authors

  • Francesca Isabel N. de Vera National Institute of Physics, University of the Philippines Diliman
  • Hannah R. Bardolaza National Institute of Physics, University of the Philippines Diliman
  • Jonalds L. Tacneng National Institute of Physics, University of the Philippines Diliman
  • Xyrus A. Galapia National Institute of Physics, University of the Philippines Diliman
  • Carlo A. Arcilla National Institute of Geological Sciences, University of the Philippines Diliman
  • Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

We report the broad and double resistive transition of Bi2Sr2-xInxCaCu2O8+x bulk samples. The two onset transitions are broad and within the transition range of Bi-2212. As indium concentration increases, there are slight significant changes in the average lattice parameters but the XRD peaks visibly broaden indicating large variation of c-axis lattice parameters. We conclude that the double resistive transition was due to In-doped Bi-2212 phase and pure Bi-2212 phase because indium was not fully substituted the Sr site of Bi-2212. Excess indium also favors formation of impurity phases that cause the broadening of the resistivity transition plots.

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Published

2016-08-18

Issue

Section

Condensed Matter Physics and Materials Science

How to Cite

[1]
“Broad double resistive transitions of Bi2Sr2-xInxCaCu2O8+x bulk samples”, Proc. SPP, vol. 34, no. 1, pp. SPP–2016, Aug. 2016, Accessed: Mar. 28, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2016-1B-05