Preliminary investigation using Raman spectroscopy on nanoporous silicon

Authors

Joseph Christopher R. Ragasa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rhona Olivia M. Gonzales ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arvin I. Mabilangan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Preliminary investigation using Raman scattering spectroscopy was performed to determine the relationship of the Raman spectra (RS) to the porosity of porous silicon (pSi). It was found that the RS peak of high porosity pSi is broader and has greater downshift as compared to that of lower porosity pSi. Measurements were done with respect to the RS of bulk crystalline silicon. It was established that the RS peak location was proportional to the increase in porosity of pSi due to strain-induced lattice mismatch. The results showed that Raman spectroscopy is a possible method for approximating the porosity of the material.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-PA-33

Section

Poster Session PA

Published

2010-10-25

How to Cite

[1]

JCR Ragasa, ROM Gonzales, AI Mabilangan, MJ Defensor, AA Salvador, and AS Somintac, Preliminary investigation using Raman spectroscopy on nanoporous silicon, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-PA-33 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-PA-33.