Temperature dependence of energy gaps of MBE grown InₓGa₁₋ₓAs/GaAs multiple quantum wells on GaAs(100) substrates

Authors

Maria Herminia M. Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joel G. Fernando ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Ten periods of strained InₓGa₁₋ₓAs/GaAs multiple quantum wells (MQWs) with different indium mole fraction x and varying well and barrier widths were grown on GaAs(100) substrates using molecular beam epitaxy. Temperature dependent photoluminescence spectroscopy was used to investigate the optical properties of the MQWs as a function of temperature, particularly, the peak energy of the samples which corresponds to its effective energy gap. The Varshni model of temperature dependence of energy gap was used to fit the effective energy gap of the MQWs. It was found that a shift ΔE from the band gap of bulk InₓGa₁₋ₓAs with the same x corresponds to the energy due to the confinement of the carriers within the well, the strain-induced energies, and the exciton binding energy observed for quantum wells.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-PA-30

Section

Poster Session PA

Published

2010-10-25

How to Cite

[1]

MHM Balgos, JG Fernando, MJ Defensor, RB Jaculbia, AA Salvador, and AS Somintac, Temperature dependence of energy gaps of MBE grown InₓGa₁₋ₓAs/GaAs multiple quantum wells on GaAs(100) substrates, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-PA-30 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-PA-30.