Thermal oxidation of indium thin films on magnesium oxide (MgO)(001) substrates
Abstract
Thermal oxidations of indium thin films on MgO (001) substrates were done at different temperatures and oxidation environments. XRD pattern obtained from the samples showed the presence of two crystalline forms of In₂O₃, a cubic-In₂O₃ (c-In₂O₃) and a corundumtype In₂O₃ (rh-In₂O₃). This is attributed to incomplete oxidation of indium films together with the strain caused by the large lattice mismatch calculated to be 58.36% between the cubic single crystal MgO substrate and the oxidized indium thin films. The relative intensity of the peaks decreases with increasing oxidation temperature suggesting the depletion of the films have taken place during the process via evaporation. The formation of indium oxide films is favored at 450°C in an oxygen ambient environment as shown by the XRD pattern.
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