Argon plasma etching of IR-PLD grown Bi-2212 thin films

Authors

Jeffrey C. de Vero ⋅ PH National Institute of Physics, University of the Philippines Diliman
Wilson O. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Henry J. Ramos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Argon plasma etching of Bi₂Sr₂Ca₁Cu₂O_8+δ (Bi-2212) IR- PLD grown films is reported. Etch rate as high as 0.35µm/min were measured, and were found to be dependent on argon discharge current during etching. EDX measurements showed that no significant variations in the film stoichiometry even at higher discharge currents. The transition temperature Tc did not deteriorate with plasma etching but increases with decreasing film thickness. Etch results indicates that the Argon Plasma Etching can be a viable technology for high Tc superconducting thin-film patterning.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-PA-01

Section

Poster Session PA

Published

2010-10-25

How to Cite

[1]

JC de Vero, WO Garcia, HJ Ramos, and RV Sarmago, Argon plasma etching of IR-PLD grown Bi-2212 thin films, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-PA-01 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-PA-01.