Suppression of carrier thermalization in quantum dots through tensile strain

Authors

  • JG Porquez National Institute of Physics, University of the Philippines Diliman
  • KM Omambac National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
  • MHH Balgos National Institute of Physics, University of the Philippines Diliman
  • Michael Defensor National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Bimodal size distribution InAs quantum dots (QDs) grown on a native GaAs substrate are strained through epitaxial lift off (ELO) techniques. The epilayer containing the QDs is bonded on MgO and Si substrates. The ELO film is subjected to low temperatures experiencing either compressive (on MgO) or tensile (on Si) strain due to difference in thermal expansion coefficients of the substrates. With increasing tensile strain, the photoluminescence spectra show intensity enhancement in small QD optical transitions and suppression in large QD transitions. This is attributed to increased carrier confinement for tensile strained QDs which effectively suppresses carrier thermalization in small QDs.

SPP 2010 Proceedings Cover

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Published

2010-10-25

Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

License

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Suppression of carrier thermalization in quantum dots through tensile strain”, Proc. SPP, vol. 28, no. 1, pp. SPP–2010, Oct. 2010, Accessed: Mar. 28, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2010-6B-05