Suppression of carrier thermalization in quantum dots through tensile strain

Authors

JG Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
KM Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
MHH Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Bimodal size distribution InAs quantum dots (QDs) grown on a native GaAs substrate are strained through epitaxial lift off (ELO) techniques. The epilayer containing the QDs is bonded on MgO and Si substrates. The ELO film is subjected to low temperatures experiencing either compressive (on MgO) or tensile (on Si) strain due to difference in thermal expansion coefficients of the substrates. With increasing tensile strain, the photoluminescence spectra show intensity enhancement in small QD optical transitions and suppression in large QD transitions. This is attributed to increased carrier confinement for tensile strained QDs which effectively suppresses carrier thermalization in small QDs.

Downloads

Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-6B-05

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

J Porquez, K Omambac, R Jaculbia, M Balgos, M Defensor, AS Somintac, and AA Salvador, Suppression of carrier thermalization in quantum dots through tensile strain, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-6B-05 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-6B-05.