1.55 μm laser excitation of narrow bandgap semiconductors for terahertz emission

Authors

Christopher Que ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Hidekazu Nakajima ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui

Abstract

A 1.55 μm femtosecond fiber laser was used to excite p- and n-type InAs and InSb semiconductors at the reflection geometry. Results revealed that at this excitation wavelength, InAs showed a much stronger THz emission. This contradicts previous studies wherein InSb has been demonstrated to have a stronger THz emission. However, using a Si lens coupler, significant enhancement of the THz wave was observed from InSb semiconductor as compared to InAs. Significant increase in the THz emission was also seen from InSb under a magnetic field. The combination of the InSb emitter and the femtosecond fiber laser system provides a stable and compact THz system.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5B-01

Section

Optics

Published

2010-10-25

How to Cite

[1]

C Que, H Nakajima, and M Tani, 1.55 μm laser excitation of narrow bandgap semiconductors for terahertz emission, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5B-01 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5B-01.