Optical and electrical characterization of an interdigitated structured metal-semiconductor photodiode fabricated on n-GaAs substrate

Authors

RB Payod ⋅ PH National Institute of Physics, University of the Philippines Diliman
S Crosby ⋅ PH National Institute of Physics, University of the Philippines Diliman
D Tabacon ⋅ PH National Institute of Physics, University of the Philippines Diliman
DA Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
F Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
R Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
M Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

A metal-semiconductor photodiode with interdigitated finger structure was successfully fabricated and characterized. The metal used for the schottky contact was Ti/Au and the substrate semiconductor was an ndoped GaAs. The turn-on voltage of the photodiode was 0.2 V while the breakdown voltage was -0.5 V. The relatively low measured values were attributed to the high doping concentration of the substrate. Photocurrent generation started at 1.4 eV which approximately corresponds to the GaAs energy bandgap.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-06

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

R Payod, S Crosby, D Tabacon, D Vasquez, F Awitan, R Jaculbia, M Defensor, AA Salvador, and AS Somintac, Optical and electrical characterization of an interdigitated structured metal-semiconductor photodiode fabricated on n-GaAs substrate, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-06 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-06.