Optical and electrical characterization of an interdigitated structured metal-semiconductor photodiode fabricated on n-GaAs substrate
Abstract
A metal-semiconductor photodiode with interdigitated finger structure was successfully fabricated and characterized. The metal used for the schottky contact was Ti/Au and the substrate semiconductor was an ndoped GaAs. The turn-on voltage of the photodiode was 0.2 V while the breakdown voltage was -0.5 V. The relatively low measured values were attributed to the high doping concentration of the substrate. Photocurrent generation started at 1.4 eV which approximately corresponds to the GaAs energy bandgap.
Downloads
Issue
Strengthening physics research and education for a brighter tomorrow
25-27 October 2010, MERALCO Management and Leadership Development Center, Antipolo City