Raman spectroscopy of core-shell GaAs-AlGaAs nanowires on Si substrates

Authors

John Daniel E. Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Cheeny Rose R. Bulacan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Herminia M. Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jasher John A. Ibañes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Regine A. Loberternos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Gold-catalyzed GaAs-AlGaAs core-shell nanowires (NWs) were grown on Si(100) and Si(111) substrates using molecular beam epitaxy (MBE) via vapor-liquid-solid (VLS) technique. The gold deposition time was varied which effectively vary the density of the nanowires. The NWs were characterized using Raman spectroscopy. By getting the GaAs LO/TO phonon ratios of the nanowire, the effect of increasing the Au deposition time on the crystallinity of the NWs was determined. A relation was found between the Au deposition time and crystal quality of the nanowires on Si(100) while the inverse is true for nanowires on Si(111).

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-04

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

JDE Vasquez, CRR Bulacan, MHM Balgos, JJA Ibañes, RA Loberternos, AA Salvador, and AS Somintac, Raman spectroscopy of core-shell GaAs-AlGaAs nanowires on Si substrates, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-04 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-04.