Raman spectroscopy of core-shell GaAs-AlGaAs nanowires on Si substrates

Authors

John Daniel E. Vasquez National Institute of Physics, University of the Philippines Diliman
Cheeny Rose R. Bulacan National Institute of Physics, University of the Philippines Diliman
Maria Herminia M. Balgos National Institute of Physics, University of the Philippines Diliman
Jasher John A. Ibañes National Institute of Physics, University of the Philippines Diliman
Regine A. Loberternos National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Gold-catalyzed GaAs-AlGaAs core-shell nanowires (NWs) were grown on Si(100) and Si(111) substrates using molecular beam epitaxy (MBE) via vapor-liquid-solid (VLS) technique. The gold deposition time was varied which effectively vary the density of the nanowires. The NWs were characterized using Raman spectroscopy. By getting the GaAs LO/TO phonon ratios of the nanowire, the effect of increasing the Au deposition time on the crystallinity of the NWs was determined. A relation was found between the Au deposition time and crystal quality of the nanowires on Si(100) while the inverse is true for nanowires on Si(111).

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-04

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

JDE Vasquez, CRR Bulacan, MHM Balgos, JJA Ibañes, RA Loberternos, AA Salvador, and AS Somintac, Raman spectroscopy of core-shell GaAs-AlGaAs nanowires on Si substrates, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-04 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-04.