Raman spectroscopy of core-shell GaAs-AlGaAs nanowires on Si substrates
Abstract
Gold-catalyzed GaAs-AlGaAs core-shell nanowires (NWs) were grown on Si(100) and Si(111) substrates using molecular beam epitaxy (MBE) via vapor-liquid-solid (VLS) technique. The gold deposition time was varied which effectively vary the density of the nanowires. The NWs were characterized using Raman spectroscopy. By getting the GaAs LO/TO phonon ratios of the nanowire, the effect of increasing the Au deposition time on the crystallinity of the NWs was determined. A relation was found between the Au deposition time and crystal quality of the nanowires on Si(100) while the inverse is true for nanowires on Si(111).
Downloads
Issue
Strengthening physics research and education for a brighter tomorrow
25-27 October 2010, MERALCO Management and Leadership Development Center, Antipolo City