Terahertz emission from MBE-grown InAs and GaAs thin films on Si substrates excited in the transmission-geometry

Authors

Elmer S. Estacio ⋅ JP Institute of Laser Engineering, Osaka University
Satoru Takatori ⋅ JP Institute of Laser Engineering, Osaka University
Minh Hong Pham ⋅ JP Institute of Laser Engineering, Osaka University
Takashi Yoshioka ⋅ JP Institute of Laser Engineering, Osaka University
Tomoharu Nakazato ⋅ JP Institute of Laser Engineering, Osaka University
Marilou Cadatal-Raduban ⋅ JP Institute of Laser Engineering, Osaka University
Toshihiko Shimizu ⋅ JP Institute of Laser Engineering, Osaka University
Nobuhiko Sarukura ⋅ JP Institute of Laser Engineering, Osaka University
Masanori Hangyo ⋅ JP Institute of Laser Engineering, Osaka University
Christopher T. Que ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Tadataka Edamura ⋅ JP Central Research Laboratory, Hamamatsu Photonics, Japan
Makoto Nakajima ⋅ JP Institute for Solid State Physics, The University of Tokyo
John Vincent Misa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Terahertz radiation was generated from femtosecond laser-pumped MBE-grown InAs and GaAs thin films on Si substrates. Results showed that InAs/Si and GaAs/Si films can be excited in both reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but the absence of outstanding spectral features in its emission spectrum makes it a more viable THz spectroscopy source. Moreover, excitation fluence dependence data showed that the InAs/Si film saturates more easily; which is primarily due to the laser’s limited penetration depth in this sample.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-03

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

ES Estacio, S Takatori, MH Pham, T Yoshioka, T Nakazato, M Cadatal-Raduban, T Shimizu, N Sarukura, M Hangyo, CT Que, M Tani, T Edamura, M Nakajima, JV Misa, R Jaculbia, AS Somintac, and AA Salvador, Terahertz emission from MBE-grown InAs and GaAs thin films on Si substrates excited in the transmission-geometry, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-03 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-03.