Terahertz emission from MBE-grown InAs and GaAs thin films on Si substrates excited in the transmission-geometry

Authors

  • Elmer S. Estacio Institute of Laser Engineering, Osaka University
  • Satoru Takatori Institute of Laser Engineering, Osaka University
  • Minh Hong Pham Institute of Laser Engineering, Osaka University
  • Takashi Yoshioka Institute of Laser Engineering, Osaka University
  • Tomoharu Nakazato Institute of Laser Engineering, Osaka University
  • Marilou Cadatal-Raduban Institute of Laser Engineering, Osaka University
  • Toshihiko Shimizu Institute of Laser Engineering, Osaka University
  • Nobuhiko Sarukura Institute of Laser Engineering, Osaka University
  • Masanori Hangyo Institute of Laser Engineering, Osaka University
  • Christopher T. Que Research Center for Development of Far-Infrared Region, University of Fukui
  • Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
  • Tadataka Edamura Central Research Laboratory, Hamamatsu Photonics, Japan
  • Makoto Nakajima Institute for Solid State Physics, The University of Tokyo
  • John Vincent Misa National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Terahertz radiation was generated from femtosecond laser-pumped MBE-grown InAs and GaAs thin films on Si substrates. Results showed that InAs/Si and GaAs/Si films can be excited in both reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but the absence of outstanding spectral features in its emission spectrum makes it a more viable THz spectroscopy source. Moreover, excitation fluence dependence data showed that the InAs/Si film saturates more easily; which is primarily due to the laser’s limited penetration depth in this sample.

SPP 2010 Proceedings Cover

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Published

2010-10-25

Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

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Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Terahertz emission from MBE-grown InAs and GaAs thin films on Si substrates excited in the transmission-geometry”, Proc. SPP, vol. 28, no. 1, pp. SPP–2010, Oct. 2010, Accessed: Mar. 29, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2010-5A-03