Photoluminescence spectra of chemically oxidized nanoporous silicon

Authors

Neil Irvin F. Cabello National Institute of Physics, University of the Philippines Diliman
Rhona Olivia M. Gonzales National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Room temperature photoluminescence (PL) spectroscopy was performed on freshly prepared and chemically oxidized nanocrystalline porous silicon (Si) derived from n-type (100) Si. The PL peak was shifted by about 0.03 eV for the sample oxidized up to 30 minutes. The shifting was accompanied by the narrowing of the full width half maximum and decrease in PL intensity. The observed changes in the PL spectra were attributed to the reduction of radiative surface states in the porous Si layer.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-02

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

NIF Cabello, ROM Gonzales, AA Salvador, and AS Somintac, Photoluminescence spectra of chemically oxidized nanoporous silicon, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-02 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-02.