Analysis of in situ and in vivo surface morphology of Ga 1D nanowires on Si(100): A kinetic Monte Carlo study

Authors

  • Darwin B. Putungan Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
  • Alexandra B. Santos Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
  • Marvin A. Albao Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

Kinetic Monte Carlo (KMC) simulations were done in order to assess the potential characteristics of one-dimensional (1D) Gallium nanowires deposited in in situ and in vivo Scanning Tunneling Microscopy (STM) techniques. Although Ga 1D nanowires are known to self-assemble homogeneously (no C-defect mediation) and heterogeneously (with C- defect mediation)with almost equal probability, it was determined that increasing C-defect concentration on Si(100) decreases the homogeneous to heterogeneous 1D wires ratio (R) of Ga, as well as the mean 1D nanowires size. It was inferred that increasing C-defect density impacts the ratio R such that C-defects act as traps to diffusing Ga adatoms hereby making heterogeneous nucleation profound as contrast with the homogeneous one. On the other hand, shortened di®usion pathway for diffusing Ga adatoms triggered the formation of shorter Ga 1D nanowires.

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Article ID

SPP-2010-5A-01

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]
DB Putungan, AB Santos, and MA Albao, Analysis of in situ and in vivo surface morphology of Ga 1D nanowires on Si(100): A kinetic Monte Carlo study, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-01 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-01.