Analysis of in situ and in vivo surface morphology of Ga 1D nanowires on Si(100): A kinetic Monte Carlo study

Authors

Darwin B. Putungan ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Alexandra B. Santos ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Marvin A. Albao ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

Kinetic Monte Carlo (KMC) simulations were done in order to assess the potential characteristics of one-dimensional (1D) Gallium nanowires deposited in in situ and in vivo Scanning Tunneling Microscopy (STM) techniques. Although Ga 1D nanowires are known to self-assemble homogeneously (no C-defect mediation) and heterogeneously (with C- defect mediation)with almost equal probability, it was determined that increasing C-defect concentration on Si(100) decreases the homogeneous to heterogeneous 1D wires ratio (R) of Ga, as well as the mean 1D nanowires size. It was inferred that increasing C-defect density impacts the ratio R such that C-defects act as traps to diffusing Ga adatoms hereby making heterogeneous nucleation profound as contrast with the homogeneous one. On the other hand, shortened di®usion pathway for diffusing Ga adatoms triggered the formation of shorter Ga 1D nanowires.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-5A-01

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

DB Putungan, AB Santos, and MA Albao, Analysis of in situ and in vivo surface morphology of Ga 1D nanowires on Si(100): A kinetic Monte Carlo study, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-5A-01 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-5A-01.