Temperature dependent photoluminescence spectroscopy of GaAs-AlₓGaAs₁₋ₓ core shell nanowires on Si(100) substrates
Abstract
Core shell GaAs-AlₓGaAs₁₋ₓ nanowires were grown via MBE on Si(100) substrate using Au nanoparticles as catalyst. Samples were analyzed using temperature dependent photoluminescence (PL) spectroscopy. GaAs and AlGaAs PL peaks were observed in the spectra of all the samples while additional defect related peaks were also identified at low temperatures. The GaAs and AlGaAs bulk band to band PL peaks were plotted with respect to temperature and a fit using the BoseEinstein model was obtained. The 0K Energy Gap (E0) for GaAs is 1.515 eV and AlGaAs are 1.610 eV, 1.613 eV, 1.611 eV for Al mole fractions of 0.0633, 0.0651, and 0.0639 respectively.