Temperature dependent photoluminescence spectroscopy of GaAs-AlₓGaAs₁₋ₓ core shell nanowires on Si(100) substrates

Authors

Kaye Ann de las Alas National Institute of Physics, University of the Philippines Diliman
Maria Herminia Balgos National Institute of Physics, University of the Philippines Diliman
Michael Defensor National Institute of Physics, University of the Philippines Diliman
Jasher John Ibañes National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
Regine Loberternos National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Core shell GaAs-AlₓGaAs₁₋ₓ nanowires were grown via MBE on Si(100) substrate using Au nanoparticles as catalyst. Samples were analyzed using temperature dependent photoluminescence (PL) spectroscopy. GaAs and AlGaAs PL peaks were observed in the spectra of all the samples while additional defect related peaks were also identified at low temperatures. The GaAs and AlGaAs bulk band to band PL peaks were plotted with respect to temperature and a fit using the BoseEinstein model was obtained. The 0K Energy Gap (E0) for GaAs is 1.515 eV and AlGaAs are 1.610 eV, 1.613 eV, 1.611 eV for Al mole fractions of 0.0633, 0.0651, and 0.0639 respectively.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-4B-04

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

KA de las Alas, MH Balgos, M Defensor, JJ Ibañes, R Jaculbia, R Loberternos, AA Salvador, and AS Somintac, Temperature dependent photoluminescence spectroscopy of GaAs-AlₓGaAs₁₋ₓ core shell nanowires on Si(100) substrates, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-4B-04 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-4B-04.