Distributed Bragg reflector fabricated using nanoporous silicon
Abstract
Nanoporous silicon distributed Bragg reflectors were fabricated using electrochemical etching. The parameters used in the fabrication of each reflector were varied to produce different peak reflectivity wavelength. Optical reflectivity was used to verify the maximum % reflectivity, the peak reflectivity wavelength and the photonic bandgap range of each sample. From the optical reflectivity, the obtained peak reflectivity wavelengths of the porous silicon Distributed Bragg Reflectors (pSi-DBR) were at 6550Å, 7650Å, and 8850Å with photonic bandgap range up to2850Å and maximum % reflectivity up to 89.1%.