Distributed Bragg reflector fabricated using nanoporous silicon

Authors

  • Arvin I. Mabilangan National Institute of Physics, University of the Philippines Diliman
  • Neil Irvin F. Cabello National Institute of Physics, University of the Philippines Diliman
  • Rhona Olivia M. Gonzales National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Nanoporous silicon distributed Bragg reflectors were fabricated using electrochemical etching. The parameters used in the fabrication of each reflector were varied to produce different peak reflectivity wavelength. Optical reflectivity was used to verify the maximum % reflectivity, the peak reflectivity wavelength and the photonic bandgap range of each sample. From the optical reflectivity, the obtained peak reflectivity wavelengths of the porous silicon Distributed Bragg Reflectors (pSi-DBR) were at 6550Å, 7650Å, and 8850Å with photonic bandgap range up to2850Å and maximum % reflectivity up to 89.1%.

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Published

2010-10-25

How to Cite

[1]
AI Mabilangan, NIF Cabello, ROM Gonzales, AA Salvador, and AS Somintac, Distributed Bragg reflector fabricated using nanoporous silicon, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-2B-06 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-2B-06.