Semipolar III-nitride semiconductors for visible light emitters

Abstract

Semipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. Here, we describe how we achieved high-quality epitaxial films for semipolar QWs. The device fabrication and the optical polarization anisotropy are also discussed.