Optimization of anodization parameters for the synthesis of anodic aluminum oxide (AAO) on silicon substrate

Authors

Rogelio G. Dizon National Institute of Physics, University of the Philippines Diliman
Aleena Maria K. Laganapan National Institute of Physics, University of the Philippines Diliman
Regine Loberternos National Institute of Physics, University of the Philippines Diliman
Claude Ceniza National Institute of Physics, University of the Philippines Diliman
Jeremy Porquez National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Anodic Aluminum Oxide (AAO) from thin film aluminum sputtered on silicon substrate was synthesized using the two-step anodization process using oxalic acid solution. Both the pore diameter and interpore spacing increases with increasing applied voltage. Least deviation for these parameters was noted at 40 V while a temperature of 5°C of the anodizing solution showed the smallest deviation for interpore spacing. Scanning electron microscope (SEM) was used to image the surface morphology of AAO at different parameters.

Downloads

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-PA-11

Section

Poster Session PA

Published

2009-10-28

How to Cite

[1]

RG Dizon, AMK Laganapan, R Loberternos, C Ceniza, J Porquez, and AS Somintac, Optimization of anodization parameters for the synthesis of anodic aluminum oxide (AAO) on silicon substrate, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-PA-11 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-PA-11.