Optimization of anodization parameters for the synthesis of anodic aluminum oxide (AAO) on silicon substrate

Authors

  • Rogelio G. Dizon ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Aleena Maria K. Laganapan ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Regine Loberternos ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Claude Ceniza ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jeremy Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Anodic Aluminum Oxide (AAO) from thin film aluminum sputtered on silicon substrate was synthesized using the two-step anodization process using oxalic acid solution. Both the pore diameter and interpore spacing increases with increasing applied voltage. Least deviation for these parameters was noted at 40 V while a temperature of 5°C of the anodizing solution showed the smallest deviation for interpore spacing. Scanning electron microscope (SEM) was used to image the surface morphology of AAO at different parameters.

SPP 2009 Proceedings Cover

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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How to Cite

[1]
“Optimization of anodization parameters for the synthesis of anodic aluminum oxide (AAO) on silicon substrate”, Proc. SPP, vol. 27, no. 1, p. SPP-2009-PA-11, Oct. 2009, Accessed: Apr. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-PA-11