Optimization of anodization parameters for the synthesis of anodic aluminum oxide (AAO) on silicon substrate

Authors

Rogelio G. Dizon ⋅ PH National Institute of Physics, University of the Philippines Diliman
Aleena Maria K. Laganapan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Regine Loberternos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Claude Ceniza ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jeremy Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Anodic Aluminum Oxide (AAO) from thin film aluminum sputtered on silicon substrate was synthesized using the two-step anodization process using oxalic acid solution. Both the pore diameter and interpore spacing increases with increasing applied voltage. Least deviation for these parameters was noted at 40 V while a temperature of 5°C of the anodizing solution showed the smallest deviation for interpore spacing. Scanning electron microscope (SEM) was used to image the surface morphology of AAO at different parameters.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-PA-11

Section

Poster Session PA

Published

2009-10-28

How to Cite

[1]

RG Dizon, AMK Laganapan, R Loberternos, C Ceniza, J Porquez, and AS Somintac, Optimization of anodization parameters for the synthesis of anodic aluminum oxide (AAO) on silicon substrate, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-PA-11 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-PA-11.