Optimization results of argon ion trajectory simulations for different magnetron sputtering configurations
Abstract
Experiments on the magnetized sheet plasma source show that the addition of a magnetron sputtering configuration instead of a previous deposition setup increases the deposition rate of titanium nitride by fivefold compared to a previous orientation of magnets under the titanium target. In order to investigate the effects of the electric and magnetic fields in the thin film deposition process, the argon ion trajectories of different target bias voltages and magnet orientations are simulated using the Boris leapfrog algorithm. It is found that the presence of magnetic cusp field near the titanium target, coupled with a large negative bias, results to effectively guiding the argon ions towards the target, resulting to increased film deposition rates.